Kinetics of resistive response of SnO2 − x thin films in gas environment

Data on the gas sensitivity of SnO 2 − x thin films in oxygen and hydrogen environment are obtained. The films were fabricated by oxidizing metallic tin layers in air at various temperatures. The nonmonotonic kinetics of the resistive response of SnO 2 − x samples under gas-adsorption conditions is...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-04, Vol.42 (4), p.481-485
Main Authors: Ryabtsev, S. V., Yukish, A. V., Khango, S. I., Yurakov, Yu. A., Shaposhnik, A. V., Domashevskaya, É. P.
Format: Article
Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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Summary:Data on the gas sensitivity of SnO 2 − x thin films in oxygen and hydrogen environment are obtained. The films were fabricated by oxidizing metallic tin layers in air at various temperatures. The nonmonotonic kinetics of the resistive response of SnO 2 − x samples under gas-adsorption conditions is explained by the involvement of “biographic” electron states (determined by the manufacturing methods and machining of samples), whose density depends on the temperature conditions of manufacturing the SnO 2 − x film in the adsorbate-semiconductor interaction.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608040192