Phenomenological description of dispersion of 8-60-nm-thick silicon thin films into drops on Al2O3 inert surface

The dispersion of 8-60-nm-thick amorphous silicon thin films on a surface of aluminum oxide was studied using scanning electron microscopy and measuring the current through a thin film during vacuum heating. The temperature of the observed process of silicon thin film dispersion does not correspond...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-12, Vol.42 (13), p.1487-1491
Main Authors: Buzdugan, A. A., Gavrilov, S. A., Gromov, D. G., Redichev, E. N., Chulkov, I. S.
Format: Article
Language:English
Subjects:
Magnetic Materials
Magnetism
Materials for Electronic Engineering
Physics
Physics and Astronomy
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Summary:The dispersion of 8-60-nm-thick amorphous silicon thin films on a surface of aluminum oxide was studied using scanning electron microscopy and measuring the current through a thin film during vacuum heating. The temperature of the observed process of silicon thin film dispersion does not correspond to its expected melting temperature, which suggests a dispersion, rather than melting, process, since the thin amorphous silicon film already has a yield property. It was found that the dispersion temperature increases as the silicon thickness is reduced. It is assumed that this phenomenon is caused by the structure and energy effect of the Al 2 O 3 substrate, which propagates into silicon to a certain depth.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378260813006X