Optimization of structural perfection of 4H-polytype silicon carbide ingots

The degree of structural perfection of 4 H -polytype silicon carbide ingots grown by the modified Lely method was improved using a multistage process with sequential change in the seed orientation (similar to the previously suggested RAF process). The grown ingots 20–40 mm in diameter are characteri...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-09, Vol.43 (9), p.1248-1254
Main Authors: Avrov, D. D., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Tregubova, A. S., Fadeev, A. Yu
Format: Article
Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The degree of structural perfection of 4 H -polytype silicon carbide ingots grown by the modified Lely method was improved using a multistage process with sequential change in the seed orientation (similar to the previously suggested RAF process). The grown ingots 20–40 mm in diameter are characterized by an almost total absence of peripheral low-angle boundaries and a significant decrease in the micropore density (two-three orders of magnitude in comparison with the starting material). Repeated shouldering of obtained seeds with (000 ) C orientation up to 50–55 mm in diameter results in insignificant deterioration of the structural quality in newly formed peripheral regions of the ingot. High-quality perfect silicon carbide wafers were obtained, characterized by a micropore and basal dislocation densities of 5–40 and 10 3 –10 4 cm −2 , respectively.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782609090267