Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire su...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-12, Vol.43 (12), p.1606-1609
Main Authors: Kaltaev, Kh. Sh-o., Sidel’nikova, N. S., Nizhankovskiy, S. V., Dan’ko, A. Y., Rom, M. A., Mateychenko, P. V., Dobrotvorskaya, M. V., Budnikov, A. T.
Format: Article
Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire surface under the effect of the reducing medium is established.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782609120069