Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire su...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-12, Vol.43 (12), p.1606-1609
Main Authors: Kaltaev, Kh. Sh-o., Sidel’nikova, N. S., Nizhankovskiy, S. V., Dan’ko, A. Y., Rom, M. A., Mateychenko, P. V., Dobrotvorskaya, M. V., Budnikov, A. T.
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Language:English
Subjects:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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container_title Semiconductors (Woodbury, N.Y.)
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creator Kaltaev, Kh. Sh-o.
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Dobrotvorskaya, M. V.
Budnikov, A. T.
description The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire surface under the effect of the reducing medium is established.
doi_str_mv 10.1134/S1063782609120069
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subjects Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
title Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire
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