Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi0.88Sb0.12 single crystals

The components of resistivity (ρ ij ), Hall coefficient ( R ijk ), and magnetoresistance (ρ ij, kl ) of n -Bi 0.88 Sb 0.12 single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77–300 K. It is concluded that light and heavy electrons are invol...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-02, Vol.45 (2), p.148-152
Main Authors: Tairov, B. A., Ibragimova, O. I., Rahimov, A. H., Brazis, R.
Format: Article
Language:English
Subjects:
Electronic Properties of Semiconductors
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
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Summary:The components of resistivity (ρ ij ), Hall coefficient ( R ijk ), and magnetoresistance (ρ ij, kl ) of n -Bi 0.88 Sb 0.12 single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77–300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as m 2 * / m l * = 3 and b ≈ 0.16, respectively.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611020217