Electronic states on silicon surface after deposition and annealing of SiO x films

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-05, Vol.45 (5), p.587-592
Main Authors: Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611050289