Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-11, Vol.45 (11), p.1414-1419
Main Authors: Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611110273