Differential capacitance of a p+-p junction

The differential capacitance of a p + - p junction formed by charge redistribution near the junction, has been investigated taking into account the electric field in the quasi-neutral p region. The dependence of the capacitance and current of the p + - p junction on its voltage is obtained. It is sh...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012, Vol.46 (1), p.56-66
Main Author: Shekhovtsov, N. A.
Format: Article
Language:English
Subjects:
Interfaces
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Surfaces
Thin Films
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Summary:The differential capacitance of a p + - p junction formed by charge redistribution near the junction, has been investigated taking into account the electric field in the quasi-neutral p region. The dependence of the capacitance and current of the p + - p junction on its voltage is obtained. It is shown that a change in the sign of the p + - p -junction capacitance with an increase in the injection level is caused by a decrease in the bipolar drift mobility in the p -type region. It is also demonstrated that a change in the sign of the p + - p -junction capacitance with an increase in the reverse voltage determines the charge reduction near the junction, as the increase in the negative charge of acceptor ions predominates over the increase in the positive charge of holes.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612010174