The effect of annealing on the properties of Ga2O3 anodic films

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2012-02, Vol.46 (2), p.267-273
• Main Authors: Kalygina, V. M., Zarubin, A. N., Nayden, Ye. P., Novikov, V. A., Petrova, Yu. S., Tolbanov, O. P., Tyazhev, A. V., Yaskevich, T. M.
• Format: Article
• Language: English
• Subjects: Fabrication; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Testing of Materials and Structures; Treatment
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782612020145

The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. Ga 2 O 3 films with thicknesses of 200–300 nm were formed by the anodic oxidation of n -GaAs wafers with the donor concentration N d = (1–2) × 10 16 cm −3 . It is shown that, after annealing at 900°C for 30 min, the gallium arsenide films contain only the β Ga 2 O 3 phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of β-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the Ga 2 O 3 films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni-GaAs-Ga 2 O 3 -V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode.