Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te

The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge-carrier energy spectrum and the silver-telluride defectness is analyzed. It is es...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-07, Vol.46 (7), p.861-865
Main Authors: Jafarov, M. B., Aliev, F. F., Hasanova, R. A., Saddinova, A. A.
Format: Article
Language:English
Subjects:
Electronic Properties of Semiconductors
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
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Summary:The energy gap and its temperature coefficient are calculated depending on the concentration of defects in silver telluride with a Te and Ag excess. On the basis of the obtained data, the correlation between the charge-carrier energy spectrum and the silver-telluride defectness is analyzed. It is established that the correlation is a reflection of more general fundamental relations between the energy structure and the defect concentration in Ag 2 Te caused by ions and vacancies of silver atoms in the sublattice.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261207007X