Specific features of the field generation of minority charge carriers in Si-SiO2 structures

The specific features of generation processes occurring in Si-SiO 2 structures in the presence of a strong electric field in the oxide layer ( E ox ≈ 10 MV cm −1 ) are considered. It is shown that, after a certain threshold electric-field strength is reached, an additional mechanism of minority char...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-04, Vol.47 (4), p.511-513
Main Authors: Baraban, A. P., Konorov, P. P., Dmitriev, V. A., Prokof’ev, V. A.
Format: Article
Language:English
Subjects:
Low-Dimensional Systems
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
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Summary:The specific features of generation processes occurring in Si-SiO 2 structures in the presence of a strong electric field in the oxide layer ( E ox ≈ 10 MV cm −1 ) are considered. It is shown that, after a certain threshold electric-field strength is reached, an additional mechanism of minority charge-carrier generation, associated with the development of electroluminescence processes in the oxide layer, becomes operative.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613040040