Electrical properties of Pd-oxide-InP structures

Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectif...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-03, Vol.49 (3), p.364-366
Main Authors: Grebenshchikova, E. A., Evstropov, V. V., Il’inskaya, N. D., Mel’nikov, Yu. S., Serebrennikova, O. Yu, Sidorov, V. G., Sherstnev, V. V., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Low-Dimensional Systems
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
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Summary:Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615030094