On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-08, Vol.49 (8), p.1007-1011
Main Authors: Veleschuk, V. P., Vlasenko, A. I., Kisselyuk, M. P., Vlasenko, Z. K., Khmil’, D. N., Borshch, V. V.
Format: Article
Language:English
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ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615080229