Probing of the multilayer Si/SiGe structure with a flux of nonequilibrium acoustic phonons

The Si/Si 0.8 Ge 0.2 /Si double quantum wells grown on a silicon substrate were probed in the reflection geometry with a flux of terahertz nonequilibrium acoustic phonons produced by the heat pulse technique. A comparison of the detected phonon arrival signals with those obtained under similar condi...

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Bibliographic Details
Published in:Physics of the solid state 2009-10, Vol.51 (10), p.2040-2044
Main Authors: Sharkov, A. I., Galkina, T. I., Klokov, A. Yu
Format: Article
Language:English
Subjects:
Physics
Physics and Astronomy
Semiconductors and Dielectrics
Solid State Physics
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Summary:The Si/Si 0.8 Ge 0.2 /Si double quantum wells grown on a silicon substrate were probed in the reflection geometry with a flux of terahertz nonequilibrium acoustic phonons produced by the heat pulse technique. A comparison of the detected phonon arrival signals with those obtained under similar conditions from a silicon sample without a quantum well structure permits one to isolate the component due to the phonon reflection from quantum wells. This reflected signal was found to be strongly anisotropic.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783409100084