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Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon
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Published in: | Technical physics 2007-08, Vol.52 (8), p.1093-1097 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
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cites | cdi_FETCH-LOGICAL-c245t-53c1b50034fd44e8f6e440b3fff463837d1a704476d5336c13d5eb7e9072ed5a3 |
container_end_page | 1097 |
container_issue | 8 |
container_start_page | 1093 |
container_title | Technical physics |
container_volume | 52 |
creator | Nagornov, Yu. S. Kostishko, B. M. Mikov, S. N. Atazhanov, Sh. R. Zolotov, A. V. Pchelintseva, E. S. |
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doi_str_mv | 10.1134/S1063784207080221 |
format | article |
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language | eng |
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title | Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon |
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