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Anisotropy of electrical breakdown in crystalline quartz
Partial breakdown of crystalline silicon dioxide in a pulsed nonuniform electric field is considered. Breakdown channels lie in planes of silicon ions that are parallel to the c axis of the crystal (up to six equivalent directions of the channels are observed). The formation of breakdown channels is...
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Published in: | Technical physics 2009-07, Vol.54 (7), p.1076-1079 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Partial breakdown of crystalline silicon dioxide in a pulsed nonuniform electric field is considered. Breakdown channels lie in planes of silicon ions that are parallel to the
c
axis of the crystal (up to six equivalent directions of the channels are observed). The formation of breakdown channels is satisfactorily described in terms of cascade Auger transitions with regard to the crystallochemical symmetry of the quartz lattice. |
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ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784209070275 |