Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate

Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure wit...

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Bibliographic Details
Published in:Technical physics letters 2010-04, Vol.36 (4), p.365-368
Main Authors: Marem’yanin, K. V., Ermolaev, D. M., Fateev, D. V., Morozov, S. V., Maleev, N. A., Zemlyakov, V. E., Gavrilenko, V. I., Popov, V. V., Shapoval, S. Yu
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Physics
Physics and Astronomy
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Summary:Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure with narrow slits, which increase the photoresponse amplitude by an order of magnitude.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378501004022X