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Calculating the extended defect contrast for the X-ray-beam-induced current method
The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The s...
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Published in: | Technical physics letters 2012-10, Vol.38 (10), p.913-916 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The simulated XBIC profile contrasts are compared to experimentally measured patterns. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S1063785012100239 |