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Calculating the extended defect contrast for the X-ray-beam-induced current method

The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The s...

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Bibliographic Details
Published in:Technical physics letters 2012-10, Vol.38 (10), p.913-916
Main Authors: Shabel’nikova, Ya. L., Yakimov, E. B., Grigor’ev, M. V., Fahrtdinov, R. R., Bushuev, V. A.
Format: Article
Language:English
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Summary:The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The simulated XBIC profile contrasts are compared to experimentally measured patterns.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785012100239