Normally off transistors based on in situ passivated AlN/GaN heterostructures

A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm...

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Bibliographic Details
Published in:Technical physics letters 2016-07, Vol.42 (7), p.750-753
Main Authors: Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Physics
Physics and Astronomy
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Summary:A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785016070312