Evolution of the metallic copper surface at the oxidation in CCl4-DMF

The evolution of the compact copper surface at the etching in the system of CCl 4 -DMF with a concentration of carbon tetrachloride ≈ 1 M was studied using atomic force microscopy (AFM). The dependence of the copper etch in a rate on the time and the concentration of the oxidizing agent (carbon tetr...

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Bibliographic Details
Published in:Russian journal of general chemistry 2013-06, Vol.83 (6), p.1013-1020
Main Authors: Panteleev, S. V., Maslennikov, S. V., Spirina, I. V., Ignatov, S. K., Isakov, M. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Chemistry/Food Science
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Summary:The evolution of the compact copper surface at the etching in the system of CCl 4 -DMF with a concentration of carbon tetrachloride ≈ 1 M was studied using atomic force microscopy (AFM). The dependence of the copper etch in a rate on the time and the concentration of the oxidizing agent (carbon tetrachloride) was measured. The dynamics of formation and destruction of active centers in the reaction was investigated.
ISSN:1070-3632
1608-3350
DOI:10.1134/S1070363213060017