Spectral control of secondary ion photoeffect: a way to optoionics?

• Published in: Nanotechnologies in Russia 2010-06, Vol.5 (5-6), p.390-398
• Main Authors: Rokakh, A. G., Matasov, M. D., Zhukov, A. G.
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Industrial and Production Engineering; Machines; Manufacturing; Materials Science; Nanotechnology; Processes
• ISSN: 1995-0780; 1995-0799
• DOI: 10.1134/S1995078010050149

The possibility of optical control over the secondary ion yield from a photoconducting target is demonstrated; using it, one can both increase and decrease this yield. The sign of the secondary ion photoeffect (SIP) is determined by the energy position of each element in the target, which represents a limited solid solution of lead sulfide and cadmium sulfide prepared by thermal deposition in vacuum with subsequent annealing. In addition, the sign of the effect depends on the intensity and spectral composition of illuminating light. The possibility of changing the SIP sign is confirmed by theoretical calculations of the isoenergetic secondary ion spectrum and by the experimental results for lead ions. It is established that the SIP sign is determined by the competition between the compensation and recombination mechanisms. Recombination is accompanied by photoluminescence in both the near- and middle-IR range. The spectral optical control of the secondary ion yield offers new opportunities for creating nanometer-thick materials and makes the galvanic decoupling of the control and technology chains possible, thus paving the way for optoionics.