Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffer layers on the characteristics of heterostructure...

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Bibliographic Details
Published in:Nanotechnologies in Russia 2020-03, Vol.15 (2), p.169-174
Main Authors: Khrapovitskaya, Yu. V., Chernykh, M. Y., Ezubchenko, I. S., Grishchenko, Yu. V., Mayboroda, I. O., Chernykh, I. A., Andreev, A. A., Perminov, P. A., Tsotsorin, A. N., Chernykh, M. I., Zanaveskin, M. L., Semeykin, I. V.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Devices and Products Based on Nanomaterials and Nanotechnologies
Industrial and Production Engineering
Machines
Manufacturing
Materials Science
Nanotechnology
Processes
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Summary:Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffer layers on the characteristics of heterostructures and test transistors based on them is studied. Powerful transistors were obtained with an output pulse power of 45 W at a frequency of 1 GHz with a supply voltage of 28 V. The maximum efficiency of the transistor was 55%.
ISSN:1995-0780
1995-0799
DOI:10.1134/S1995078020020123