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Effects of glass additions on energy storage performance of ( Pb 0.97 La 0.02 )( Zr 0.92 Sn 0.05 Ti 0.03 ) O 3 antiferroelectric thick films
50 μm-thick ( Pb 0.97 La 0.02 )( Zr 0.92 Sn 0.05 Ti 0.03 ) O 3 antiferroelectric (AFE) thick films with different amount of 0.8 PbO –0.2 B 2 O 3 glass additions were fabricated by the screen-printing method on alumina substrate, which was pre-coated with Pt as electrode. The effects of glass additio...
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| Published in: | Journal of advanced dielectrics 2013-04, Vol.3 (2), p.1350012 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | 50 μm-thick ( Pb
0.97
La
0.02
)( Zr
0.92
Sn
0.05
Ti
0.03
) O
3
antiferroelectric (AFE) thick films with different amount of 0.8 PbO –0.2 B
2
O
3
glass additions were fabricated by the screen-printing method on alumina substrate, which was pre-coated with Pt as electrode. The effects of glass additions on dielectric properties and energy storage performance were investigated in details. Due to the enhancement of breakdown strength (BDS) of the specimens by the addition of glass, the energy storage performances of the thick films could be greatly improved. As a result, with 3% glass addition, the BDS of the specimens were as high as 475 kV/cm, the maximum polarization of 34.8 μC/cm
2
and the maximum recoverable energy storage density of 7.4 J/cm
3
were obtained. The results indicated the ( Pb
0.97
La
0.02
)( Zr
0.92
Sn
0.05
Ti
0.03
) O
3
(PLZST) thick films have a promising potential application in capacitors for pulsed power systems. |
|---|---|
| ISSN: | 2010-135X 2010-1368 |
| DOI: | 10.1142/S2010135X13500124 |