Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Saved in:
Bibliographic Details
Published in:Applied physics express 2008-12, Vol.1, p.124002
Main Authors: Sekiguchi, Hiroto, Kishino, Katsumi, Kikuchi, Akihiko
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.1.124002