12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

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Bibliographic Details
Published in:Applied physics express 2009-06, Vol.2, p.61001
Main Authors: Hoshi, Shinichi, Itoh, Masanori, Marui, Toshiharu, Okita, Hideyuki, Morino, Yoshiaki, Tamai, Isao, Toda, Fumihiko, Seki, Shohei, Egawa, Takashi
Format: Article
Language:eng ; jpn
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ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.2.061001