Improved Efficiency of 255--280 nm AlGaN-Based Light-Emitting Diodes

We report on the fabrication and characterization of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with the emission wavelength ranging from 255 to 280 nm depending on the Al composition of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of ov...

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Bibliographic Details
Published in:Applied physics express 2010-06, Vol.3 (6), p.061004-061004-3
Main Authors: Pernot, Cyril, Kim, Myunghee, Fukahori, Shinya, Inazu, Tetsuhiko, Fujita, Takehiko, Nagasawa, Yosuke, Hirano, Akira, Ippommatsu, Masamichi, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Format: Article
Language:English
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Summary:We report on the fabrication and characterization of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with the emission wavelength ranging from 255 to 280 nm depending on the Al composition of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the sapphire substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extraction.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.061004