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High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with...
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Published in: | Applied physics express 2010-12, Vol.3 (12), p.121003-121003-3 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with a maximum transconductance ($g_{\text{mmax}}$) of 4.7 mS/mm. The characteristic features of the device were a high source-to-drain breakdown voltage of 1800 V and a high applicable gate-to-source voltage of 4 V in the forward direction. Temperature dependence of DC characteristics demonstrated that the drain current degradation at elevated temperatures for the AlGaN-channel HEMT was appreciably small as compared with the conventional AlGaN/GaN HEMT. This is the first report showing successful DC operation of AlGaN-channel HEMT with high Al composition of over 0.5. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.1143/APEX.3.121003 |