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High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with...

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Bibliographic Details
Published in:Applied physics express 2010-12, Vol.3 (12), p.121003-121003-3
Main Authors: Tokuda, Hirokuni, Hatano, Maiko, Yafune, Norimasa, Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Kuzuhara, Masaaki
Format: Article
Language:English
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Summary:AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with a maximum transconductance ($g_{\text{mmax}}$) of 4.7 mS/mm. The characteristic features of the device were a high source-to-drain breakdown voltage of 1800 V and a high applicable gate-to-source voltage of 4 V in the forward direction. Temperature dependence of DC characteristics demonstrated that the drain current degradation at elevated temperatures for the AlGaN-channel HEMT was appreciably small as compared with the conventional AlGaN/GaN HEMT. This is the first report showing successful DC operation of AlGaN-channel HEMT with high Al composition of over 0.5.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.121003