Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101%...

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Bibliographic Details
Published in:Applied physics express 2011-02, Vol.4 (2), p.023002-023002-3
Main Authors: Mizunuma, Kotaro, Yamanouchi, Michihiko, Ikeda, Shoji, Sato, Hideo, Yamamoto, Hiroyuki, Gan, Hua-Dong, Miura, Katsuya, Hayakawa, Jun, Matsukura, Fumihiro, Ohno, Hideo
Format: Article
Language:English
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Summary:The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature ($T_{\text{a}}$) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-$T_{\text{a}}$ annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.023002