Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth

The high crystalline quality of $a$-plane GaN growth on $r$-plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3--4 orders of magnitude lower than that of the as-grown film and the...

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Published in:Applied physics express 2011-03, Vol.4 (3), p.035501-035501-3
Main Authors: Hsu, Hsiao-Chiu, Su, Yan-Kuin, Huang, Shyh-Jer, Chuang, Ricky W, Cheng, Shin-Hao, Cheng, Chiao-Yang
Format: Article
Language:English
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Summary:The high crystalline quality of $a$-plane GaN growth on $r$-plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3--4 orders of magnitude lower than that of the as-grown film and the coalescence thickness of OSELOG-grown GaN is less than 5 μm. Low temperature cathodoluminescence (CL) shows that the optimum trimethylgallium (TMGa) flow rate during OSELOG plays a significant role in enhancing the crystalline quality of $a$-plane GaN. The crystalline quality of $a$-plane GaN can be effectively improved using OSELOG compared with the other ELOG approaches.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.035501