Effect of Al Concentration in AlGaAs Oxide Mask Pattern on Faceting Kinetics during Selective Area Growth of GaAs by Molecular Beam Epitaxy

An oxidized AlGaAs layer is used as an inorganic negative resist for low-energy electron-beam lithography. The patterned oxide can function as an ultrathin template for selectively growing GaAs mesa structures having side facets vertical to a GaAs(001) substrate by molecular beam epitaxy. With incre...

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Bibliographic Details
Published in:Applied physics express 2011-04, Vol.4 (4), p.045601-045601-3
Main Authors: Matsuda, Kazuhiro, Hayashi, Shota, Ushio, Shoji, Kaneko, Tadaaki
Format: Article
Language:English
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Summary:An oxidized AlGaAs layer is used as an inorganic negative resist for low-energy electron-beam lithography. The patterned oxide can function as an ultrathin template for selectively growing GaAs mesa structures having side facets vertical to a GaAs(001) substrate by molecular beam epitaxy. With increase in the Al concentration in the oxide, the geometric shape of the structures with lateral growth on the oxide surface changes from triangular to pentagonal. This change is explained by a minimization effect of the total surface energy of the structure, including the interfacial energy between the lateral growth region and the patterned oxide mask.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.045601