60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K

We studied characteristic temperatures ($T_{0}$) of laser diodes (LDs) grown on semipolar GaN substrates and emitting in the green spectral range. For several semipolar laser designs with and without an electron blocking layer (EBL), $T_{0}$ remains higher (161--246 K) than that typically reported f...

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Bibliographic Details
Published in:Applied physics express 2011-10, Vol.4 (10), p.102103-102103-3
Main Authors: Sizov, Dmitry, Bhat, Rajaram, Song, Kechang, Allen, Donald, Paddock, Barry, Coleman, Sean, Hughes, Lawrence C, Zah, Chung-en
Format: Article
Language:English
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Summary:We studied characteristic temperatures ($T_{0}$) of laser diodes (LDs) grown on semipolar GaN substrates and emitting in the green spectral range. For several semipolar laser designs with and without an electron blocking layer (EBL), $T_{0}$ remains higher (161--246 K) than that typically reported for $c$-plane green LDs. The slope efficiency measured in the pulsed regime is nearly temperature independent. These observations indicate that $T_{0}$ is mainly determined by intrinsic quantum well (QW) properties, such as higher differential gain. A high $T_{0}$ and a sufficient injection efficiency allow the achievement of a continuous wave output power of 60 mW for an LD without an EBL.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.102103