Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

This letter presents the dc characteristics of normally Off AlInN/AlN/GaN metal--oxide--semiconductor heterostructure field-effect transistors (MOS-HFETs). The devices were fabricated using a recessed gate and SiON dielectric layers for gate isolation. For a device with a 1.5 μm gate length and an 8...

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Bibliographic Details
Published in:Applied physics express 2011-11, Vol.4 (11), p.114101-114101-3
Main Authors: Morgan, Daniel, Sultana, Mahbuba, Fatima, Husna, Sugiyama, Sho, Fareed, Qhalid, Adivarahan, Vinod, Lachab, Mohamed, Khan, Asif
Format: Article
Language:English
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Summary:This letter presents the dc characteristics of normally Off AlInN/AlN/GaN metal--oxide--semiconductor heterostructure field-effect transistors (MOS-HFETs). The devices were fabricated using a recessed gate and SiON dielectric layers for gate isolation. For a device with a 1.5 μm gate length and an 8-μm-long channel, the threshold voltage was above +1.5 V and a maximum drain current density of 0.7 A/mm was reached under 6 V gate bias. These enhancement-mode MOS-HFETs have an excellent potential for power electronics applications.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.114101