Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved whe...

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Bibliographic Details
Published in:Applied physics express 2011-12, Vol.4 (12), p.124101-124101-3
Main Authors: Medjdoub, Farid, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain
Format: Article
Language:English
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Summary:In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved when introducing an AlGaN back barrier while significantly reducing the sub-threshold drain leakage current and enhancing the RF performance by the reduction of short-channel effects. Therefore, the AlN/GaN/AlGaN double heterostructure enables high-aspect-ratio devices generating extremely high current density, low leakage current, and high voltage operation.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.124101