Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1979-01, Vol.18 (1), p.113-122
Main Authors: Yamasaki, Kimiyoshi, Yoshida, Minoru, Sugano, Takuo
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.18.113