Growth of Dislocation-Free Undoped InP Crystals

Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crys...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1980-01, Vol.19 (6), p.L331
Main Authors: Shinoyama, Seiji, Uemura, Chikao, Yamamoto, Akio, Tohno, Shun-ichi
Format: Article
Language:English
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Summary:Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crystal in a pulling of the P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.19.L331