Impurities in Thin Films Produced by Ion Beam Sputtering

Thin films of Si are prepared by 5–8 keV Ar + and Xe + ion beam sputtering. Films with thicknesses between 250 and 2000Å are deposited on Si (100) substrates which were biased either to ground or +2-5 kV potentials to repel reflected and sputtered Ar + and Xe + ions. RBS and PIXE analyses are carrie...

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Published in:Japanese Journal of Applied Physics 1980-01, Vol.19 (9), p.L523
Main Author: Bhattacharya, R. S.
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Language:English
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description Thin films of Si are prepared by 5–8 keV Ar + and Xe + ion beam sputtering. Films with thicknesses between 250 and 2000Å are deposited on Si (100) substrates which were biased either to ground or +2-5 kV potentials to repel reflected and sputtered Ar + and Xe + ions. RBS and PIXE analyses are carried out in order to determine the impurity contents of the films. The films have been found to contain either Ar or Xe depending upon the beam used and a considerable amount of other impurities which have been identified as Fe, Cr and Ni in the same proportion as in a stainless steel. It is concluded that the impurity from the ion beam is an inherent drawback in the ion beam sputtering technique of thin film deposition and can only be avoided by using the same type of ion as the target material. The source of the latter impurities could be identified as the ion gun itself, the walls of which are sputtered and transmitted to the film via the target.
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title Impurities in Thin Films Produced by Ion Beam Sputtering
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