Surface Damage on Si Substrates Caused by Reactive Sputter Etching

Surface damage on silicon substrates caused by RSE has been investigated. Defects are classified into four categories in order of destruction, namely, precipitates surrounded by elastic strain field, surface roughness pattern, polycrystalline and amorphous silicon, and no defects, based on the resul...

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Published in:Japanese Journal of Applied Physics 1981-01, Vol.20 (5), p.893
Main Authors: Yabumoto, Norikuni, Oshima, Masaharu, Michikami, Osamu, Yoshii, Shizuka
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Language:English
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description Surface damage on silicon substrates caused by RSE has been investigated. Defects are classified into four categories in order of destruction, namely, precipitates surrounded by elastic strain field, surface roughness pattern, polycrystalline and amorphous silicon, and no defects, based on the results of TEM and RHEED observation. In particular, precipitates which reach a depth more than 500 Å were found to cause OSF. The surface damage consists of contamination (C, F, O) layer, C and defect mixed layer, and defect layer in order from the top. The degree of these defects and contaminations expand with increasing power density and etching duration. RSE conditions, where no defects are formed, were determined, e.g. , within 1 minute at 0.4 W cm -2 .
doi_str_mv 10.1143/JJAP.20.893
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title Surface Damage on Si Substrates Caused by Reactive Sputter Etching
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