Galvanomagnetic Study of 2-Dimensional Electron Gas in Al x Ga 1-x As/GaAs Heterojunction FET

Measurements of the Hall and Shubnikov-de Haas effects of a 2-dimensional electron gas in an Al x Ga 1- x As/GaAs heterojunction interface have been performed. The electron density and mobility decayed together when the gate voltage was applied. The data of the Hall voltage and the source-drain curr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1981-06, Vol.20 (6), p.L443
Main Authors: Narita, Shin-ichiro, Takeyama, Shojiro, Luo, Wen Bin, Hiyamizu, Satoshi, Nanbu, Kazuo, Hashimoto, Hisao
Format: Article
Language:English
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Summary:Measurements of the Hall and Shubnikov-de Haas effects of a 2-dimensional electron gas in an Al x Ga 1- x As/GaAs heterojunction interface have been performed. The electron density and mobility decayed together when the gate voltage was applied. The data of the Hall voltage and the source-drain current as functions of the gate voltage are transformed to magnetoconductances σ x x and σ x y , using Wick's theory to clarify the quantization of the conductance at the Landau level tails.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.20.L443