Investigation of 1.3- µm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals

1.3-µm InGaAsP/InP buried-hetero structure (BH) and oxide-stripe semiconductor lasers were investigated by the measurement of current-injection-induced acoustic (CIA) signals. The results show that gain suppression occurs well below the threshold current and that a large internal optical loss exists...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1981-09, Vol.20 (9), p.L631
Main Authors: Suemune, Ikuo, Yamanishi, Masamichi, Mikoshiba, Nobuo
Format: Article
Language:English
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Summary:1.3-µm InGaAsP/InP buried-hetero structure (BH) and oxide-stripe semiconductor lasers were investigated by the measurement of current-injection-induced acoustic (CIA) signals. The results show that gain suppression occurs well below the threshold current and that a large internal optical loss exists and is saturated at about threshold regardless of the laser structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.20.L631