P-n Junction Capacitance Thermometers

Silicon and germanium p-n junction capacitance thermometers making use of the temperature dependence of the junction capacitance were developed. At the temperatures at which the sensitivities are at a maximum, the specific sensitivities of the silicon and germanium capacitance thermometers are exper...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1983-01, Vol.22 (5R), p.878
Main Authors: Katsuhata, Makoto, Yamagata, Shigeo, Miyayama, Yoshiyuki, Hariu, Takashi, Shibata, Yukio
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon and germanium p-n junction capacitance thermometers making use of the temperature dependence of the junction capacitance were developed. At the temperatures at which the sensitivities are at a maximum, the specific sensitivities of the silicon and germanium capacitance thermometers are experimentally shown to be 0.34 and 1.74, respectively, at a measurement frequency of 1 kHz and are much greater than those of commercially-available strontium titanate glass-ceramic capacitance thermometers. According to the design principle shown here, a gallium arsenide p-n junction capacitance thermometer can measure a very low temperature down to about 2.8 K at a measurement frequency of 0.1 Hz.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.22.878