4–5 µm Emissions from 1.3-µm and 1.5-µm InGaAsP/InP Lasers: Evidence for Excitations in Split-Off Valence Band

4–5 µm wavelength emissions associated with recombinations of holes in the split-off valence band and electrons in the light-hole valence band were observed from 1.3 µm and 1.5 µm InGaAsP/InP lasers. Hole populations in the split-off valence band are dramatically increased with the current level and...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1983-09, Vol.22 (9A), p.L556
Main Authors: Nonomura, Kazuhiro, Suemune, Ikuo, Yamanishi, Masamichi, Mikoshiba, Nobuo
Format: Article
Language:eng ; jpn
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Summary:4–5 µm wavelength emissions associated with recombinations of holes in the split-off valence band and electrons in the light-hole valence band were observed from 1.3 µm and 1.5 µm InGaAsP/InP lasers. Hole populations in the split-off valence band are dramatically increased with the current level and temperature rise. It was deduced from their current dependence as well as that of acoustic signals so far reported that Auger recombination is a most probable mechanism up to about half of the threshold current, and that intervalence band absorption and its saturation behavior mainly influences the lasing characteristics above that current.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.22.L556