Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP

A suitable GaAs 1- z P z substrate composition ( z ) for InGaAsP double heterojunction laser diodes is discussed. In 1- x Ga x As 1- y P y ( x =0.83, y =0.64)/In 1- x ' Ga x ' As 1- y ' P y ' ( x '=0.67, y ' ≧0.98) laser diodes fabricated on GaAs 1- z P z ( z =0.3) subs...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1985-01, Vol.24 (7A), p.L551
Main Authors: Fujii, Sadao, Sakai, Shiro, Umeno, Masayoshi
Format: Article
Language:English
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Summary:A suitable GaAs 1- z P z substrate composition ( z ) for InGaAsP double heterojunction laser diodes is discussed. In 1- x Ga x As 1- y P y ( x =0.83, y =0.64)/In 1- x ' Ga x ' As 1- y ' P y ' ( x '=0.67, y ' ≧0.98) laser diodes fabricated on GaAs 1- z P z ( z =0.3) substrate by a two-phase-solution technique operated under pulsed conditions at room temperature. The peak wavelength and the threshold current density ( J th ) were 658.6 nm and 12 kA/cm -2 , respectively. This J th is lower than in the previously reported planer type laser diodes fabricated from the same material system.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.24.L551