Growth and properties of low-resistivity n-type ZnSe crystals grown from the melt with excess Zn under argon pressure

This paper describes a technique for growing low-resistivity n-type ZnSe crystals from the melt under pressure and the electrical and optical properties of the crystals. The low-resistivity ZnSe crystals are grown from the melt with excess Zn of 3 to 9.3 mol%. The resistivity of the crystals is of t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1985-12, Vol.24 (12), p.L941-L943
Main Authors: KIKUMA, I, FURUKOSHI, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:This paper describes a technique for growing low-resistivity n-type ZnSe crystals from the melt under pressure and the electrical and optical properties of the crystals. The low-resistivity ZnSe crystals are grown from the melt with excess Zn of 3 to 9.3 mol%. The resistivity of the crystals is of the order of 0.1 Ω·cm and the electron Hall mobility is 220 to 380 cm 2 /Vs. Near-band-edge emission is observed from the low-resistivity ZnSe crystals at room temperature in photoluminescence measurement.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.24.L941