Direct writing of silicon lines by pyrolytic argon laser CVD

A novel laser-induced CVD apparatus with a direct pattern writing ability by a pyrolytic decomposition of SiH 4 has been developed. With this equipment, a CW argon laser with an output power of 20 W was used. The argon laser beam, which provides localized heating of the substrate, was utilized to de...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1986-12, Vol.25 (12), p.1830-1833
Main Authors: ISHIZU, A, INOUE, Y, NISHIMURA, T, AKASAKA, Y, MIKI, H
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A novel laser-induced CVD apparatus with a direct pattern writing ability by a pyrolytic decomposition of SiH 4 has been developed. With this equipment, a CW argon laser with an output power of 20 W was used. The argon laser beam, which provides localized heating of the substrate, was utilized to decompose gas-phase molecules, resulting in film deposition. By using this equipment, direct pattern writing of polycrystalline silicon with a smooth surface on silicon substrate covered with SiO 2 layer has been realized with a high deposition rate as well as good controllability and crystallinity.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.25.1830