Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder

A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the G...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1986, Vol.25 (1), p.L63-L65
Main Authors: SHIDA, K, WADA, T, NISHINAKA, H, IGARASHI, T
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10 -7
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.25.l63