Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder

A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the G...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1986, Vol.25 (1), p.L63-L65
Main Authors: SHIDA, K, WADA, T, NISHINAKA, H, IGARASHI, T
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93
cites cdi_FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93
container_end_page L65
container_issue 1
container_start_page L63
container_title Japanese Journal of Applied Physics
container_volume 25
creator SHIDA, K
WADA, T
NISHINAKA, H
IGARASHI, T
description A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10 -7
doi_str_mv 10.1143/jjap.25.l63
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_25_L63</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8016319</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEqVw4gV84IbS-i9OfKwKtFRFRSqcI8fZqK7cJNguCI48OSlFXHa00uynmUXompIRpYKPt1vdjVg6cpKfoAHlIksEkekpGhDCaCIUY-foIoRtv8pU0AH6vrMeTMSm3XXa29A2uK3x21430X5BhefaOewh2BB1YwCXED8AGry2ydNq_XD_gnVT4ZmehPHEHQRvIIJvQ_R7E_cecAXv1kDAPTluAAe9-x2dA7xpXQX-Ep3V2gW4-tMheu2503myXM0ep5NlYniaxkQBaJZVZZkzI6QiJfAy1YJzVnLOhWZS8SzXUJaVyjkwMJJIJSXJjDJQKz5Et0eu6eMFD3XRebvT_rOgpDi8r1gsJs8FS4ul5L375ujudDDa1b6vb8P_SU6o5FTxH6ltccM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>SHIDA, K ; WADA, T ; NISHINAKA, H ; IGARASHI, T</creator><creatorcontrib>SHIDA, K ; WADA, T ; NISHINAKA, H ; IGARASHI, T</creatorcontrib><description>A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10 -7</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.25.l63</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1986, Vol.25 (1), p.L63-L65</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93</citedby><cites>FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4022,27922,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=8016319$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIDA, K</creatorcontrib><creatorcontrib>WADA, T</creatorcontrib><creatorcontrib>NISHINAKA, H</creatorcontrib><creatorcontrib>IGARASHI, T</creatorcontrib><title>Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder</title><title>Japanese Journal of Applied Physics</title><description>A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10 -7</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EEqVw4gV84IbS-i9OfKwKtFRFRSqcI8fZqK7cJNguCI48OSlFXHa00uynmUXompIRpYKPt1vdjVg6cpKfoAHlIksEkekpGhDCaCIUY-foIoRtv8pU0AH6vrMeTMSm3XXa29A2uK3x21430X5BhefaOewh2BB1YwCXED8AGry2ydNq_XD_gnVT4ZmehPHEHQRvIIJvQ_R7E_cecAXv1kDAPTluAAe9-x2dA7xpXQX-Ep3V2gW4-tMheu2503myXM0ep5NlYniaxkQBaJZVZZkzI6QiJfAy1YJzVnLOhWZS8SzXUJaVyjkwMJJIJSXJjDJQKz5Et0eu6eMFD3XRebvT_rOgpDi8r1gsJs8FS4ul5L375ujudDDa1b6vb8P_SU6o5FTxH6ltccM</recordid><startdate>1986</startdate><enddate>1986</enddate><creator>SHIDA, K</creator><creator>WADA, T</creator><creator>NISHINAKA, H</creator><creator>IGARASHI, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1986</creationdate><title>Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder</title><author>SHIDA, K ; WADA, T ; NISHINAKA, H ; IGARASHI, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHIDA, K</creatorcontrib><creatorcontrib>WADA, T</creatorcontrib><creatorcontrib>NISHINAKA, H</creatorcontrib><creatorcontrib>IGARASHI, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHIDA, K</au><au>WADA, T</au><au>NISHINAKA, H</au><au>IGARASHI, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1986</date><risdate>1986</risdate><volume>25</volume><issue>1</issue><spage>L63</spage><epage>L65</epage><pages>L63-L65</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10 -7</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.25.l63</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 1986, Vol.25 (1), p.L63-L65
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_25_L63
source Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T10%3A50%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20comparison%20of%20quantized%20Hall%20resistance%20between%20Si-MOSFET%20and%20GaAs/AlGaAs%20heterostructure%20devices%20on%20the%20same%20sample%20holder&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=SHIDA,%20K&rft.date=1986&rft.volume=25&rft.issue=1&rft.spage=L63&rft.epage=L65&rft.pages=L63-L65&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.25.l63&rft_dat=%3Cpascalfrancis_cross%3E8016319%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c355t-9eea27dbb82c4690be3b5a4332b3334a269378aebbd983e2ec60696607c9cef93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true