High speed response in optoelectronic gated thyristor

High speed response in a three terminal p n p n double heterostructure optoelectronic gated thyristor is demonstrated. The gate electrode on the active layer is operated to sweep out excess carriers in the active layer. The turn-off delay time has been measured to be 5 ns, which is two orders of mag...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1987-06, Vol.26 (6), p.L1014-L1016
Main Authors: TASHIRO, Y, KASAHARA, K, HAMAO, N, SUGIMOTO, M, YANASE, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:High speed response in a three terminal p n p n double heterostructure optoelectronic gated thyristor is demonstrated. The gate electrode on the active layer is operated to sweep out excess carriers in the active layer. The turn-off delay time has been measured to be 5 ns, which is two orders of magnitude improvement compared with that for the two terminal mode operation. Furthermore, it has been shown that the turn-off delay time cannot be estimated from the conventional 90-10% fall time.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.26.l1014