Synchrotron radiation-assisted etching of silicon surface

The photo-assisted etching of heavily phosphorous-doped polycrystalline silicon by chlorine was studied using synchrotron radiation as an extreme ultraviolet (EUV) light source. The quantum yield for the removal of the Si atoms at a chlorine pressure of 0.3 Torr was found to be about 0.5% photon -1...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1987-07, Vol.26 (7), p.L1110-L1112
Main Authors: HAYASAKA, N, HIRAYA, A, SHOBATAKE, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The photo-assisted etching of heavily phosphorous-doped polycrystalline silicon by chlorine was studied using synchrotron radiation as an extreme ultraviolet (EUV) light source. The quantum yield for the removal of the Si atoms at a chlorine pressure of 0.3 Torr was found to be about 0.5% photon -1 using the Ti-filtered light, which is mostly in the EUV region, 1-20 nm. Formation of electronically excited Cl + ions upon EUV irradiation was confirmed by emission spectroscopy. Negative bias applied to the Si crystal was found to increase the etch rate.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.26.l1110