Analysis of the atomic structure of the Si(111)√3 × √3-Bi: surface by X-ray photoelectron diffraction

It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analy...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1987-08, Vol.26 (8), p.L1335-L1337
Main Authors: PARK, C. Y, ABUKAWA, T, HIGASHIYAMA, K, KONO, S
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Specific materials
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111)√3×√3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111)√3×√3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3.1 Å as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.26.l1335